Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 203-207
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Au/PZT/BIT/p-Si结构铁电存储二极管I-V特性

于军 , 王华 , 2 董晓敏 , 周文利 , 王耘波 , 郑远开 and 赵建洪

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Key words: 二极管, I-V特性, PLD

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 203-207
      于军, 王华, 2 董晓敏, 周文利, 王耘波, 郑远开, 赵建洪. Au/PZT/BIT/p-Si结构铁电存储二极管I-V特性[J]. 半导体学报(英文版), 2001, 22(2): 203-207.
      Citation:
      于军, 王华, 2 董晓敏, 周文利, 王耘波, 郑远开, 赵建洪. Au/PZT/BIT/p-Si结构铁电存储二极管I-V特性[J]. 半导体学报(英文版), 2001, 22(2): 203-207.
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      • Received Date: 2015-08-19

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