PAPERS
Abstract: The microwave testing system of SiC MESFET is analyzed.For the device based on the third era semiconductor,the microwave testing system of SiC MESFET is established associating to the testing technology of Si and GaAs MESFET.The test of watt level power output is accomplished under the working frequency of 2GHz.The result is that the power gain is greater than 6dB,the fT is 6.7GHz,and fmax achieves 25GHz.
Key words: microwave power, testing, SiC MESFET, output power
| 1 |
An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects M. Hema Lata Rao, N. V. L. Narasimha Murty Journal of Semiconductors, 2015, 36(1): 014004. doi: 10.1088/1674-4926/36/1/014004 |
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A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology Su Shi, Liao Xiaoping Journal of Semiconductors, 2009, 30(5): 054004. doi: 10.1088/1674-4926/30/5/054004 |
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Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu, et al. Journal of Semiconductors, 2008, 29(2): 334-337. |
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Optimization of a Thermoelectric Microwave Power Sensor Han Lei, Huang Qing’an, Liao Xiaoping Journal of Semiconductors, 2008, 29(4): 789-793. |
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| 15 |
A Novel Inline Type Microwave Power Sensor Han Lei, Huang Qing'an, Liao Xiaoping Chinese Journal of Semiconductors , 2007, 28(7): 1144-1148. |
| 16 |
Fabrication of SiC MESFETs for Microwave Power Applications Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, et al. Chinese Journal of Semiconductors , 2007, 28(1): 10-13. |
| 17 |
1mm SiC Multi-Finger Gate Microwave Power Device Chen Gang, Qian Wei, Chen Bin, Bai Song Chinese Journal of Semiconductors , 2006, 27(S1): 419-421. |
| 18 |
S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate Cai Shujun, Pan Hongshu, Chen Hao, Li Liang, Zhao Zhenping, et al. Chinese Journal of Semiconductors , 2006, 27(2): 266-269. |
| 19 |
Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate Luo Weijun, Chen Xiaojuan, Li Chengzhan, Liu Xinyu, He Zhijing, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1981-1983. |
| 20 |
Design, Fabrication, and Testing of Single-Side Alignment of 16×0.8nm Arrayed Waveguide Grating Li Jian, An Junming, Wang Hongjie, Xia Junlei, Hu Xiongwei, et al. Chinese Journal of Semiconductors , 2005, 26(2): 254-257. |
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Received: 20 August 2015 Revised: Online: Published: 01 December 2006
| Citation: |
Wang Tongxiang, Pan Hongshu, Li Liang. Microwave Power-Tested Technology of SiC MESFET[J]. Journal of Semiconductors, 2006, 27(S1): 239-241.
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Wang T X, Pan H S, Li L. Microwave Power-Tested Technology of SiC MESFET[J]. Chin. J. Semicond., 2006, 27(13): 239.
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