Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 956-960
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InP基片在连续波CO_2激光局域加热时的温度上升特性

吴云峰 , 叶玉堂 , 吴泽明 , 杨先明 and 秦宇伟

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Key words: InP, 激光微细加工, 激光诱导温度上升

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 956-960
      吴云峰, 叶玉堂, 吴泽明, 杨先明, 秦宇伟. InP基片在连续波CO_2激光局域加热时的温度上升特性[J]. 半导体学报(英文版), 2004, 25(8): 956-960.
      Citation:
      吴云峰, 叶玉堂, 吴泽明, 杨先明, 秦宇伟. InP基片在连续波CO_2激光局域加热时的温度上升特性[J]. 半导体学报(英文版), 2004, 25(8): 956-960.
      shu

      • Received Date: 2015-08-19

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