Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 279-283
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Pt/n-GaN肖特基接触的退火行为

张泽洪 , 孙元平 , 赵德刚 , 段俐宏 , 王俊 , 沈晓明 , 冯淦 , 冯志宏 and 杨辉

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Key words: GaN, Pt, 肖特基接触, 退火

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 279-283
      张泽洪, 孙元平, 赵德刚, 段俐宏, 王俊, 沈晓明, 冯淦, 冯志宏, 杨辉. Pt/n-GaN肖特基接触的退火行为[J]. 半导体学报(英文版), 2003, 24(3): 279-283.
      Citation:
      张泽洪, 孙元平, 赵德刚, 段俐宏, 王俊, 沈晓明, 冯淦, 冯志宏, 杨辉. Pt/n-GaN肖特基接触的退火行为[J]. 半导体学报(英文版), 2003, 24(3): 279-283.
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      • Received Date: 2015-08-20

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