Abstract: The structure of a vertical multijunction detector is presented.The workmanship conditions and results of thermomigration are presented.The insulation line method of disposing electrode wire is introduced,and the problem of photoetching an electrode after thermomigration is solved.Additionally,the effects of the workmanship conditions on device performance are analyzed.Through contrasting the sensitivity region and the inefficacy region,several current parameters of the vertical multijunction detector are calculated.In particular,the efficiency of collecting photoelectrons excited in the device for two X-ray marker spectra that come from two targets is calculated.The spectrum responsivity of the device is calculated and discussed,and the selection of window material of the device is discussed.Finally,through measuring the simulation defects in the metal mouldboard,the device is proved to have sufficient responsivity and distinguishability.

Key words: detector, multijunction, X-ray