| Citation: |
Chen Yongsheng, Yang Shi'e, Wang Jianhua, Lu Jingxiao, Gao Xiaoyong, Gu Jinhua, Zheng Wen, Zhao Shangli. Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells[J]. Journal of Semiconductors, 2008, 29(11): 2130-2135.
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Chen Y S, Yang S, Wang J H, Lu J X, Gao X Y, Gu J H, Zheng W, Zhao S L. Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells[J]. J. Semicond., 2008, 29(11): 2130.
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Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells
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Abstract
Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films and solar cells are prepared by plasma enhanced chemical vapour deposition (PECVD).The effects of diborane concentration,thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated.With the optimum p-layer deposition parameters,a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers.In addition,the carriers transport mechanism of p-type μc-Si:H films is discussed. -
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