| Citation: |
Wang Reng, Fang Weizheng, Zhao Pei, Zhang Lei, Ge Jin, Yuan Shixin, Zhang Huier, Hu Shuhong, Dai Ning, Chen Xiaoshu, Wu Xiaojun, He Shan, Wang Gang. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. Journal of Semiconductors, 2008, 29(5): 940-943.
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Wang R, Fang W Z, Zhao P, Zhang L, Ge J, Yuan S X, Zhang H E, Hu S H, Dai N, Chen X S, Wu X J, He S, Wang G. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. J. Semicond., 2008, 29(5): 940.
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Growth and Characteristics of ZnTe Single Crystal for THz Technology
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Abstract
ZnTe single crystals were grown perfectly by employing the Te-solution method.X-ray diffraction was introduced to investigate the crystals,and 〈110〉 oriented crystals of 10mm×10mm size were obtained.The transmittance is about 61% in range of 2.5 ~20mm,as measured with a Fourier Transform Infrared spectrometer.The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24eV.Moreover,a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti:sapphire amplifier system.The THz radiation signal has a pulse width of about 0.18ps and frequency bandwidth of 5THz.-
Keywords:
- Te-solution method,
- ZnTe crystal,
- X-ray diffraction,
- THz
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References
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Proportional views
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