| Citation: |
Huang Hua, Zhang Haiying, Yang Hao, Yin Junjian, Zhu Min, Ye Tianchun. A Super-Low-Noise,High-Gain MMIC LNA[J]. Journal of Semiconductors, 2006, 27(12): 2080-2084.
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Huang H, Zhang H Y, Yang H, Yin J J, Zhu M, Ye T C. A Super-Low-Noise,High-Gain MMIC LNA[J]. Chin. J. Semicond., 2006, 27(12): 2080.
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A Super-Low-Noise,High-Gain MMIC LNA
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Abstract
A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology.The on-chip matched amplifier employs lumped elements to reduce the circuit size,and shows a 50Ω noise figure less than 0.9dB,gain greater than 26dB,and return loss less than -10dB in the S-C band range of 3.5 to 4.3GHz.The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range.It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.-
Keywords:
- low noise amplifier,
- enhancement PHEMT,
- MMIC
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References
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Proportional views
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