Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 128-131
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P-Type Si/Sige resonant Tunnelling diodes

Xiong Chenrong, Wang Minsheng, Huang Wentao, Chen Peiyi, Wang Yan and Luo Guangli

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Abstract: P-type double-barrier quantum well resonant tunnelling diodes is realiZed by ultra high vacuum epitaxy tool GS400. A peak to valley current ratio of 1. 13 and a peak current density of 1. 589kA/cm2 at room temperature ( 293K D from continuous dc current-voltage measurements are recorded while at 77K With pulsed current-voltage measurements the corresponding values are 1. 24 and 1. 086kA/cm2 . The loW PVCR in both cases are attributed to the energy band features and thermal effects of Si1-IGeI/Si heterostructures.

Key words: RTDs

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 128-131
      Xiong Chenrong, Wang Minsheng, Huang Wentao, Chen Peiyi, Wang Yan, Luo Guangli. P-Type Si/Sige resonant Tunnelling diodes[J]. Journal of Semiconductors, 2003, 24(S1): 128-131. ****Xiong C R, Wang M S, Huang W T, Chen P Y, Wang Y, Luo G L. P-Type Si/Sige resonant Tunnelling diodes[J]. Chin. J. Semicond., 2003, 24(S1): 128.
      Citation:
      Xiong Chenrong, Wang Minsheng, Huang Wentao, Chen Peiyi, Wang Yan, Luo Guangli. P-Type Si/Sige resonant Tunnelling diodes[J]. Journal of Semiconductors, 2003, 24(S1): 128-131. ****
      Xiong C R, Wang M S, Huang W T, Chen P Y, Wang Y, Luo G L. P-Type Si/Sige resonant Tunnelling diodes[J]. Chin. J. Semicond., 2003, 24(S1): 128.
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      P-Type Si/Sige resonant Tunnelling diodes

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China,Institute of Microelectronics, Tsinghua University, Beijing 100084, China,Institute of Microelectronics, Tsinghua University, Beijing 100084, China,Institute of Microelectronics, Tsinghua University, Beijing 100084, China,Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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