Citation: |
Nie Yuhong, Liu Yong, Yao Shouguang. Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets[J]. Journal of Semiconductors, 2007, 28(1): 127-130.
****
Nie Y H, Liu Y, Yao S G. Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets[J]. Chin. J. Semicond., 2007, 28(1): 127.
|
Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets
-
Abstract
The "zone method" is introduced to simulate wall temperature distribution in an MOCVD reactor.This method is used to calculate the wall temperature distribution of a radial flow MOCVD reactor with three separate vertical inlets.Results show that the distribution rule for the wall temperature differs at different walls.When the radial flow MOCVD reactor with three separate vertical inlets is put in a natural convective heat transfer environment,the maximum difference in wall temperature is 123K.Such a temperature difference will have large effects on gas flow behavior and the deposition process.In order to keep the walls at low temperatures,the outer convective heat transfer coefficient must be larger than 84W/m2·K.-
Keywords:
- MOCVD,
- numerical simulation,
- zone method,
- wall temperature
-
References
-
Proportional views