Chin. J. Semicond. > 2000, Volume 21 > Issue 6 > 536-541
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A Novel Depletion- Mode MOS Gated Emitter Shorted Thyristor

张鹤鸣 , 戴显英 , 张义门 , 马晓华 and 林大松

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Key words: Thyristor

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(6): 536-541
      张鹤鸣, 戴显英, 张义门, 马晓华, 林大松. A Novel Depletion- Mode MOS Gated Emitter Shorted Thyristor[J]. 半导体学报(英文版), 2000, 21(6): 536-541.
      Citation:
      张鹤鸣, 戴显英, 张义门, 马晓华, 林大松. A Novel Depletion- Mode MOS Gated Emitter Shorted Thyristor[J]. 半导体学报(英文版), 2000, 21(6): 536-541.
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      • Received Date: 2015-08-20

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