Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 667-669
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大电流(直流)冲击试验对-族氮化物异质结深电子态的影响

卢励吾 , 张砚华 , GeWeikun , W Y Ho , CharlesSurya and K Y Tongc

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    卢励吾, 张砚华, GeWeikun, W Y Ho, CharlesSurya, K Y Tongc. 大电流(直流)冲击试验对-族氮化物异质结深电子态的影响[J]. 半导体学报(英文版), 1999, 20(8): 667-669.
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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 667-669
      卢励吾, 张砚华, GeWeikun, W Y Ho, CharlesSurya, K Y Tongc. 大电流(直流)冲击试验对-族氮化物异质结深电子态的影响[J]. 半导体学报(英文版), 1999, 20(8): 667-669.
      Citation:
      卢励吾, 张砚华, GeWeikun, W Y Ho, CharlesSurya, K Y Tongc. 大电流(直流)冲击试验对-族氮化物异质结深电子态的影响[J]. 半导体学报(英文版), 1999, 20(8): 667-669.
      shu

      • Received Date: 2015-08-20

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