Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 317-321
|

CONTENTS

HV/CVD系统Si、SiGe低温掺杂外延

刘志农 , 贾宏勇 , 罗广礼 , 陈培毅 , 林惠旺 and 钱佩信

+ Author Affiliations

PDF

Key words: SiGe, HBT, HV/CVD

    • Search

    Advanced Search >>

    GET CITATION

    柯三黄，黄美纯，王仁智. Si－GaAs（001）异质界面的价带不连续性及其应变效应[J]. 半导体学报(英文版), 1996, 17(3): 171-176.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2601 Times PDF downloads: 1072 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 317-321
      柯三黄，黄美纯，王仁智. Si－GaAs（001）异质界面的价带不连续性及其应变效应[J]. 半导体学报(英文版), 1996, 17(3): 171-176.
      Citation:
      刘志农, 贾宏勇, 罗广礼, 陈培毅, 林惠旺, 钱佩信. HV/CVD系统Si、SiGe低温掺杂外延[J]. 半导体学报(英文版), 2001, 22(3): 317-321.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return