Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 317-321
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HV/CVD系统Si、SiGe低温掺杂外延

刘志农 , 贾宏勇 , 罗广礼 , 陈培毅 , 林惠旺 and 钱佩信

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Key words: SiGe, HBT, HV/CVD

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 317-321
      刘志农, 贾宏勇, 罗广礼, 陈培毅, 林惠旺, 钱佩信. HV/CVD系统Si、SiGe低温掺杂外延[J]. 半导体学报(英文版), 2001, 22(3): 317-321.
      Citation:
      刘志农, 贾宏勇, 罗广礼, 陈培毅, 林惠旺, 钱佩信. HV/CVD系统Si、SiGe低温掺杂外延[J]. 半导体学报(英文版), 2001, 22(3): 317-321.
      shu

      • Received Date: 2015-08-20

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