1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors

Wang Yinsheng; Li Xiangguang; Fu Yizhu; Wang Dianli; Ding Xiaoming; Sheng Guoxing; Kang Xiaohu

J. Semicond. > 2008, Volume 29 > Issue 5 > 965-969

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1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors

Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing and Kang Xiaohu

+ Author Affiliations

Abstract: Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.

Key words: silicon, microwave, power transistor

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Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing, Kang Xiaohu. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. Journal of Semiconductors, 2008, 29(5): 965-969.

Wang Y S, Li X G, Fu Y Z, Wang D L, Ding X M, Sheng G X, Kang X H. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. J. Semicond., 2008, 29(5): 965.

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Received: 18 August 2015 Revised: 26 November 2007 Online: Published: 01 May 2008

Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.

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