J. Semicond. > 2008, Volume 29 > Issue 5 > 965-969

PAPERS

1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors

Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing and Kang Xiaohu

+ Author Affiliations

PDF

Abstract: Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.

Key words: siliconmicrowavepower transistor

1

Green perovskite CsPbBr3 light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

Viktoriia Mastalieva, Anastasiya Yakubova, Maria Baeva, Vladimir Neplokh, Dmitry M. Mitin, et al.

Journal of Semiconductors. doi: 10.1088/1674-4926/24120010

2

High-power microwaves response characteristics of silicon and GaAs solar cells

Xiangrui Meng, Changchun Chai, Fuxing Li, Yi Sun, Yintang Yang, et al.

Journal of Semiconductors, 2022, 43(11): 112701. doi: 10.1088/1674-4926/43/11/112701

3

Zinc-doped CdS nanoparticles synthesized by microwave-assisted deposition

Abideen A. Ibiyemi, Ayodeji O Awodugba, Olusola Akinrinola, Abass A Faremi

Journal of Semiconductors, 2017, 38(9): 093002. doi: 10.1088/1674-4926/38/9/093002

4

Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon

Yaohu Lei, Zhigang Zhao, Jinchuan Guo, Ji Li, Hanben Niu, et al.

Journal of Semiconductors, 2016, 37(10): 106001. doi: 10.1088/1674-4926/37/10/106001

5

A high power active circulator using GaN MMIC power amplifiers

Liming Gu, Wenquan Che, Fan-Hsiu Huang, Hsien-Chin Chiu

Journal of Semiconductors, 2014, 35(11): 115003. doi: 10.1088/1674-4926/35/11/115003

6

The micro morphology correction function of a silicon wafer CMP surface

Haokun Yang, Yuling Liu, Ming Sun, Yingde Li

Journal of Semiconductors, 2014, 35(5): 053002. doi: 10.1088/1674-4926/35/5/053002

7

Microwave annealing effects on ZnO films deposited by atomic layer deposition

Shirui Zhao, Yabin Dong, Mingyan Yu, Xiaolong Guo, Xinwei Xu, et al.

Journal of Semiconductors, 2014, 35(11): 112001. doi: 10.1088/1674-4926/35/11/112001

8

Fabrication of a microstrip patch antenna integrated in low-resistance silicon wafer using a BCB dielectric

Tianxi Wang, Mei Han, Gaowei Xu, Le Luo

Journal of Semiconductors, 2013, 34(10): 104008. doi: 10.1088/1674-4926/34/10/104008

9

RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT

T. R. Lenka, G. N. Dash, A. K. Panda

Journal of Semiconductors, 2013, 34(11): 114003. doi: 10.1088/1674-4926/34/11/114003

10

The chemisorption of Mg on the Si (100)-(2 × 1) surface

Zhang Fang, Li Wei, Wei Shuyi

Journal of Semiconductors, 2012, 33(11): 112002. doi: 10.1088/1674-4926/33/11/112002

11

Effects of vacancy structural defects on the thermal conductivity of silicon thin films

Zhang Xingli, Sun Zhaowei

Journal of Semiconductors, 2011, 32(5): 053002. doi: 10.1088/1674-4926/32/5/053002

12

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

Su Shi, Liao Xiaoping

Journal of Semiconductors, 2009, 30(5): 054004. doi: 10.1088/1674-4926/30/5/054004

13

Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization

Fu Jun

Journal of Semiconductors, 2009, 30(8): 084005. doi: 10.1088/1674-4926/30/8/084005

14

Fabrication of SiC MESFETs for Microwave Power Applications

Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, et al.

Chinese Journal of Semiconductors , 2007, 28(1): 10-13.

15

High Power SiGe X-Band (8~10GHz) Heterojunction Bipolar Transistors and Amplifiers

Ma Zhenqiang, Wang Guogong, Jiang Ningyue, Ponchak G E, Alterovitz S A, et al.

Chinese Journal of Semiconductors , 2006, 27(2): 270-275.

16

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

Xue Chunlai, Cheng Buwen, Yao Fei, Wang Qiming

Chinese Journal of Semiconductors , 2006, 27(1): 9-13.

17

Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon

Wu Dongdong, Yang Deren, Xi Zhenqiang, Que Duanlin, Zhong Yao, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 623-626.

18

Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate

Yang Hua, Zhu Hongliang, Xie Hongyun, Zhao Lingjuan, Zhou Fan, et al.

Chinese Journal of Semiconductors , 2006, 27(1): 1-4.

19

A Novel Local-Dielectric-Thickening Technique for Performance Improvements of Spiral Inductors on Si Substrates

Chinese Journal of Semiconductors , 2005, 26(5): 857-861.

20

Mn-Si Films Fabricated by Low Energy Ion Beam Deposition

Liu Lifeng, Chen Nuofu, Chai Chunlin, Yang Shaoyan, Liu Zhikai, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 94-97.

  • Search

    Advanced Search >>

    GET CITATION

    Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing, Kang Xiaohu. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. Journal of Semiconductors, 2008, 29(5): 965-969.
    Wang Y S, Li X G, Fu Y Z, Wang D L, Ding X M, Sheng G X, Kang X H. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. J. Semicond., 2008, 29(5): 965.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3001 Times PDF downloads: 1744 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 26 November 2007 Online: Published: 01 May 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing, Kang Xiaohu. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. Journal of Semiconductors, 2008, 29(5): 965-969. ****Wang Y S, Li X G, Fu Y Z, Wang D L, Ding X M, Sheng G X, Kang X H. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. J. Semicond., 2008, 29(5): 965.
      Citation:
      Wang Yinsheng, Li Xiangguang, Fu Yizhu, Wang Dianli, Ding Xiaoming, Sheng Guoxing, Kang Xiaohu. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. Journal of Semiconductors, 2008, 29(5): 965-969. ****
      Wang Y S, Li X G, Fu Y Z, Wang D L, Ding X M, Sheng G X, Kang X H. 1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J]. J. Semicond., 2008, 29(5): 965.

      1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-12
      • Revised Date: 2007-11-26
      • Published Date: 2008-05-05

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return