Citation: |
Tang Liang, Li Junhong, Hao Zhenhong, Qiao Donghai. Development and Analysis of an RF Film Bulk Acoustic Resonator[J]. Journal of Semiconductors, 2008, 29(11): 2226-2231.
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Tang L, Li J H, Hao Z H, Qiao D H. Development and Analysis of an RF Film Bulk Acoustic Resonator[J]. J. Semicond., 2008, 29(11): 2226.
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Development and Analysis of an RF Film Bulk Acoustic Resonator
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Abstract
A high-Q diaphragm-structure film bulk acoustic resonator (FBAR) with a flat support diaphragm,made of Si3N4/SiO2/Si3N4 composite films,is proposed.The N/O/N composite diaphragm overcomes the wrinkling in the released support diaphragm caused by the residual stress of a single Si3N4 or SiO2 diaphragm.ZnO piezoelectric film deposited employing a DC reactive magnetron sputtering method is used as the piezoelectric material for the FBAR device.The XRD θ-2θ scan indicates that the ZnO film has the preferred c-axis orientation growth,implying good piezoelectric properties.The S parameter measurement shows that there are three primary resonances in the frequency range from 0.4 to 2.6GHz.The series resonant frequency,parallel resonant frequency,K2eff,and quality factors of the three resonances are calculated.The third one,with a frequency of about 2.4GHz,has the highest quality factor about 500.Thus,it is expected to be a candidate to form a 2.4GHz low-phase-noise oscillator.-
Keywords:
- film bulk acoustic resonator,
- oscillator,
- filter,
- composite diaphragm,
- ZnO
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References
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Proportional views