Chin. J. Semicond. > 1996, Volume 17 > Issue 2 > 98-104
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Fowler－Nordheim高电场应力引起的MOS结构损伤研究

高文钰，严荣良

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    Received: 18 August 2015 Revised: Online: Published: 01 February 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(2): 98-104
      高文钰，严荣良. Fowler－Nordheim高电场应力引起的MOS结构损伤研究[J]. 半导体学报(英文版), 1996, 17(2): 98-104.
      Citation:
      高文钰，严荣良. Fowler－Nordheim高电场应力引起的MOS结构损伤研究[J]. 半导体学报(英文版), 1996, 17(2): 98-104.
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      • Received Date: 2015-08-18

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