Chin. J. Semicond. > 1985, Volume 6 > Issue 5 > 503-510
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红外瞬态退火全离子注入MOS工艺的研究

侯东彦 , 马腾阁 , 陈必贤 and 钱佩信

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(5): 503-510
      侯东彦, 马腾阁, 陈必贤, 钱佩信. 红外瞬态退火全离子注入MOS工艺的研究[J]. 半导体学报(英文版), 1985, 6(5): 503-510.
      Citation:
      侯东彦, 马腾阁, 陈必贤, 钱佩信. 红外瞬态退火全离子注入MOS工艺的研究[J]. 半导体学报(英文版), 1985, 6(5): 503-510.
      shu

      • Received Date: 2015-08-20

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