Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 156-160
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薄栅氧化层相关击穿电荷

刘红侠 and 郝跃

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Key words: 薄栅氧化层, 衬底热空穴(SHH), 击穿电荷量, 模型

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 156-160
      刘红侠, 郝跃. 薄栅氧化层相关击穿电荷[J]. 半导体学报(英文版), 2001, 22(2): 156-160.
      Citation:
      刘红侠, 郝跃. 薄栅氧化层相关击穿电荷[J]. 半导体学报(英文版), 2001, 22(2): 156-160.
      shu

      • Received Date: 2015-08-19

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