| Citation: |
He Baoping, Zhou Heqin, Guo Hongxia, Zhou Hui, Luo Yinhong, Yao Zhibin, Zhang Fengqi. Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices[J]. Journal of Semiconductors, 2006, 27(1): 121-125.
****
He B P, Zhou H Q, Guo H X, Zhou H, Luo Y H, Yao Z B, Zhang F Q. Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices[J]. Chin. J. Semicond., 2006, 27(1): 121.
|
Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices
-
Abstract
A method for testing total dose effects is presented for VLSI.The consumption current of the device is measured.Meanwhile,the function parameters of the device and circuit are also measured. The relations between data errors,consumption current and total radiation dose are analyzed.Ionizing radiation experiments are performed on floating gate ROM devices by using 60Co γ-rays as prescribed by this test method.The experimental aim is to examine the radiation response at various dose rates.The parameters and function failure of the devices as function of dose rate are studied.By extrapolation,we predict the failure time of a floating gate ROM device in a space radiation environment -
References
-
Proportional views
DownLoad: