| Citation: |
YANG Hui-dong, WU Chun-ya, MAI Yao-hua, LI Hong-bo, XUE Jun-ming, LI Yan, REN Hui-zhi, ZHANG Li-zhu, GENG Xin-hua, XIONG Shao-zhen. Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD[J]. Journal of Semiconductors, 2002, 23(9): 902-908.
****
YANG Hui-dong, WU Chun-ya, MAI Yao-hua, LI Hong-bo, XUE Jun-ming, LI Yan, REN Hui-zhi, ZHANG Li-zhu, GENG Xin-hua, XIONG Shao-zhen. 2002: Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD. Journal of Semiconductors, 23(9): 902-908.
|
Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD
-
Abstract
Using H2 diluted silane, series of μc-Si∶H films are fabricated at low temperature with VHF PECVD. The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure, but increase firstly and then decrease with the increase of plasma power density. Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane. However, the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency. From XRD and TEM experiments,three preferential crystalline orientations (111), (220) and (311) are observed, and the average grain sizes are different for every crystalline orientation.
-
Keywords:
- μc-Si∶H thin films,
- VHF PECVD,
- deposition rate,
- crystallinity
-
References
-
Proportional views
DownLoad: