| Citation: |
Huang Wei, Ru Guoping, Detavernier C, Van Meirhaeghe R L, Jiang Yulong, Qu Xinping, Li Bingzong. Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)[J]. Journal of Semiconductors, 2007, 28(5): 635-639.
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Huang W, Ru G P, Detavernier C, Van M R L, Jiang Y L, Qu X P, Li B Z. Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)[J]. Chin. J. Semicond., 2007, 28(5): 635.
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Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)
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Abstract
In order to clarify the effect of Pt addition on the stress of NiSi film,in situ stress measurements were taken to evaluate the stress evolution during heating and cooling treatment of Ni1-xPtxSi alloy films with different Pt concentrations.The room temperature stress,which is mainly thermal stress,was measured to be 775MPa and 1.31GPa for pure NiSi and pure PtSi films grown on Si (100) substrates,respectively.For Ni1-xPtxSi alloy film,the room temperature stress was observed to increase steadily with Pt concentration.From the temperature dependent stress evolution curves,the stress relaxation temperature was found to increase from 440℃ (for pure NiSi film) to 620℃ (for pure PtSi film) with increasing Pt concentration,thus influencing the residual stress at room temperature.-
Keywords:
- NiSi,
- Ni1-xPtxSi,
- stress
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References
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Proportional views
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