Chin. J. Semicond. > 1999, Volume 20 > Issue 5 > 378-382
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分子束外延HgCdTe薄膜位错密度的研究

于梅芳 , 杨建荣 , 王善力 , 陈新强 , 乔怡敏 , 巫艳 , 何力 and 韩培德

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(5): 378-382
      于梅芳, 杨建荣, 王善力, 陈新强, 乔怡敏, 巫艳, 何力, 韩培德. 分子束外延HgCdTe薄膜位错密度的研究[J]. 半导体学报(英文版), 1999, 20(5): 378-382.
      Citation:
      于梅芳, 杨建荣, 王善力, 陈新强, 乔怡敏, 巫艳, 何力, 韩培德. 分子束外延HgCdTe薄膜位错密度的研究[J]. 半导体学报(英文版), 1999, 20(5): 378-382.
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      • Received Date: 2015-08-20

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