Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 676-681
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辐射加固的JFET/SOS:工艺及γ辐射效应

聂纪平 , 刘忠立 , 和致经 , 于芳 , 李国花 and 张永刚

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 676-681
      聂纪平, 刘忠立, 和致经, 于芳, 李国花, 张永刚. 辐射加固的JFET/SOS:工艺及γ辐射效应[J]. 半导体学报(英文版), 1999, 20(8): 676-681.
      Citation:
      聂纪平, 刘忠立, 和致经, 于芳, 李国花, 张永刚. 辐射加固的JFET/SOS:工艺及γ辐射效应[J]. 半导体学报(英文版), 1999, 20(8): 676-681.
      shu

      • Received Date: 2015-08-20

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