Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs

Zhang Jincheng; Wang Chong; Yang Yan; Zhang; Zhang Jinfeng; Feng Qian; Li Peixian

Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China

Article Navigation > Journal of Semiconductors > 2005 > 26(12): 2396-2400

Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2005, 26(12): 2396-2400. ****Zhang J C, Wang C, Yang Y, Zhang, Zhang J F, Feng Q, Li P X. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Chin. J. Semicond., 2005, 26(12): 2396.

Citation:

Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2005, 26(12): 2396-2400. ****

Zhang J C, Wang C, Yang Y, Zhang, Zhang J F, Feng Q, Li P X. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Chin. J. Semicond., 2005, 26(12): 2396.

Citation:

Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2005, 26(12): 2396-2400. ****

Zhang J C, Wang C, Yang Y, Zhang, Zhang J F, Feng Q, Li P X. Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs[J]. Chin. J. Semicond., 2005, 26(12): 2396.

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Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs

Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China
Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University, Xi’an 710071,China

Received Date: 2015-08-19

Abstract

Abstract

AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphire substrates by low-pressure MOCVD technique.AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same device processes.The effects of an AlN spacer layer on the device performance of AlGaN/GaN HEMTs are studied by comparing the DC characteristics of these two different devices.
- AlGaN/GaN,
- AlN spacer layer,
- two-dimensional electron gas,
- HEMT

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