Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask

Xie Changqing; Liu Ming; Chen Baoqin; Ye Tianchun

Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 340-342

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Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask

Xie Changqing, Liu Ming, Chen Baoqin and Ye Tianchun

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Abstract: A new type phase shift mask--sidewall chrome attenuated phase shift mask(SCAPSM) is presented.Compared to conventional attenuated phase shift mask,only two process steps are added,but its lithography resolution can be improved greatly.With reference to exposure parameters of ArF scanner TWINSCAN XT:1400E,the SCAPSM exposure process is studied using optical lithography simulation software PROLITH.The resolution of dry 193nm optical lithography can be improved to 50nm when using SCAPSM+OAI.

Key words: 193nm optical lithography, attenuated phase shift mask, off-axis illumination, numerical aperture, PROLITH

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Xie Changqing, Liu Ming, Chen Baoqin, Ye Tianchun. Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask[J]. Journal of Semiconductors, 2006, 27(S1): 340-342.

Xie C Q, Liu M, Chen B Q, Ye T C. Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask[J]. Chin. J. Semicond., 2006, 27(13): 340.

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Received: 20 August 2015 Revised: Online: Published: 01 December 2006

A new type phase shift mask--sidewall chrome attenuated phase shift mask(SCAPSM) is presented.Compared to conventional attenuated phase shift mask,only two process steps are added,but its lithography resolution can be improved greatly.With reference to exposure parameters of ArF scanner TWINSCAN XT:1400E,the SCAPSM exposure process is studied using optical lithography simulation software PROLITH.The resolution of dry 193nm optical lithography can be improved to 50nm when using SCAPSM+OAI.

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