Chin. J. Semicond. > 2006, Volume 27 > Issue 9 > 1635-1639

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Damage Removal in GaN-LEDs by Two-Step Etching Technology

Song Yingping, Guo Xia, Ai Weiwei, Zhou Yueping and Shen Guangdi

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Abstract: A two-step etching technology is used and the optimized etching parameter is found by experiment to remove etching damage in GaN-LEDs.The PL intensity of the sample etched by ICP with a power of 750W is decreased a little.The thickness of the etch damage layer is less than 25nm.The forward turn-on voltage and reverse leakage current of the LED that was etched by the two-step etching technology are reduced noticeably.The EL intensity is increased,indicating that the leakage current and the rate of nonradiative recombination both decreased.The optical efficiency and device reliability are also improved.

Key words: two-step etchingGaN-LEDetch damagePLI-V

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    Received: 18 August 2015 Revised: 27 February 2006 Online: Published: 01 September 2006

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      Song Yingping, Guo Xia, Ai Weiwei, Zhou Yueping, Shen Guangdi. Damage Removal in GaN-LEDs by Two-Step Etching Technology[J]. Journal of Semiconductors, 2006, 27(9): 1635-1639. ****Song Y P, Guo X, Ai W W, Zhou Y P, Shen G D. Damage Removal in GaN-LEDs by Two-Step Etching Technology[J]. Chin. J. Semicond., 2006, 27(9): 1635.
      Citation:
      Song Yingping, Guo Xia, Ai Weiwei, Zhou Yueping, Shen Guangdi. Damage Removal in GaN-LEDs by Two-Step Etching Technology[J]. Journal of Semiconductors, 2006, 27(9): 1635-1639. ****
      Song Y P, Guo X, Ai W W, Zhou Y P, Shen G D. Damage Removal in GaN-LEDs by Two-Step Etching Technology[J]. Chin. J. Semicond., 2006, 27(9): 1635.

      Damage Removal in GaN-LEDs by Two-Step Etching Technology

      • Received Date: 2015-08-18
      • Accepted Date: 2006-01-13
      • Revised Date: 2006-02-27
      • Published Date: 2006-10-12

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