| Citation: |
Xu Jingbo, Li Ming, Zhang Haiying, Wang Wenxin, Yin Junjian, Liu Liang, Li Xiao, Zhang Jian, Ye Tianchun. 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs[J]. Journal of Semiconductors, 2008, 29(4): 668-671.
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Xu J B, Li M, Zhang H Y, Wang W X, Yin J J, Liu L, Li X, Zhang J, Ye T C. 1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs[J]. J. Semicond., 2008, 29(4): 668.
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1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs
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Abstract
1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology.Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals.Excellent DC and RF performances have been obtained,and the transconductance,maximum saturation drain current density,threshold voltage,current cut-off frequency,and maximum oscillation frequency of Pt/Ti/Pt/Au and Ti/Pt/Au MHEMTs were 502(503)mS/mm,382(530)mA/mm,0.1(-0.5)V,13.4(14.8)GHz,and 17.0(17.5)GHz,respectively.DC-10GHz single-pole double-throw (SPDT) switch MMICs have been designed and fabricated by Ti/Pt/Au MHEMTs.Insertion loss,isolation,input,and output return losses of SPDT chips were better than 2.93,23.34,and 20dB.-
Keywords:
- MHEMT,
- Pt/Ti/Pt/Au,
- Ti/Pt/Au,
- SPDT,
- MMIC
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References
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Proportional views
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