Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 678-681
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Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长

王军喜 , 王晓亮 , 刘宏新 , 胡国新 , 李建平 , 李晋闽 and 曾一平

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Key words: 分子束外延, GaN, 柔性衬底, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 678-681
      王军喜, 王晓亮, 刘宏新, 胡国新, 李建平, 李晋闽, 曾一平. Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长[J]. 半导体学报(英文版), 2004, 25(6): 678-681.
      Citation:
      王军喜, 王晓亮, 刘宏新, 胡国新, 李建平, 李晋闽, 曾一平. Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长[J]. 半导体学报(英文版), 2004, 25(6): 678-681.
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      • Received Date: 2015-08-19

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