
Liu Junqi, Liu Fengqi, Li Lu, Shao Ye, Guo Yu and Wang Zhanguo
Abstract: Quasi-continuous wave lasing spectra of GaAs/A1GaAs quantum cascade lasers emitting at 9.76μm are characterized by step.scan time.resolved Fourier transform infrared spectroscopy.Pronounced self·pulsation in stacked emission spectra is observed in the driving current duration.Self·heating accumulation in the active region affects the electron relaxation and transport greatly.Thermally-induced carrier occupation of the higher sublevels in an injector can leak out through a resonant condition with the continuum states above the next injector,which will be facilitated by the fourth sublevel of the coupled quantum wells active region.The leaking process arising from the periodic breaking and recovering of resonant tunneling accounts for the physical mechanism of the selfpulsed effect in stacked emission spectra.
Key words: quantum cascade laser, self-pulsation, molecular beam epitaxy
1 |
Jun Fang, Fan Zhang, Wenxian Yang, Aiqin Tian, Jianping Liu, et al. Journal of Semiconductors, 2024, 45(1): 012503. doi: 10.1088/1674-4926/45/1/012503 |
2 |
Fangxing Zha, Qiuying Zhang, Haoguang Dai, Xiaolei Zhang, Li Yue, et al. Journal of Semiconductors, 2021, 42(9): 092101. doi: 10.1088/1674-4926/42/9/092101 |
3 |
Electrical transport properties of cerium doped Bi2Te3 thin films grown by molecular beam epitaxy Peng Teng, Tong Zhou, Yonghuan Wang, Ke Zhao, Xiegang Zhu, et al. Journal of Semiconductors, 2021, 42(12): 122902. doi: 10.1088/1674-4926/42/12/122902 |
4 |
Broad area quantum cascade lasers operating in pulsed mode above 100 ℃ at λ~4.7μm Yue Zhao, Fangliang Yan, Jinchuan Zhang, Fengqi Liu, Ning Zhuo, et al. Journal of Semiconductors, 2017, 38(7): 074005. doi: 10.1088/1674-4926/38/7/074005 |
5 |
Free-space communication based on quantum cascade laser Chuanwei Liu, Shenqiang Zhai, Jinchuan Zhang, Yuhong Zhou, Zhiwei Jia, et al. Journal of Semiconductors, 2015, 36(9): 094009. doi: 10.1088/1674-4926/36/9/094009 |
6 |
A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy Pan Dai, Shulong Lu, Lian Ji, Wei He, Lifeng Bian, et al. Journal of Semiconductors, 2013, 34(10): 104006. doi: 10.1088/1674-4926/34/10/104006 |
7 |
Distributed feedback quantum cascade lasers operating in continuous-wave mode at λ ≈ 7.6 μm Zhang Jinchuan, Wang Lijun, Liu Wanfeng, Liu Fengqi, Zhao Lihua, et al. Journal of Semiconductors, 2012, 33(2): 024005. doi: 10.1088/1674-4926/33/2/024005 |
8 |
Zhang Jinchuan, Wang Lijun, Zhang Wei, Liu Wanfeng, Liu Junqi, et al. Journal of Semiconductors, 2011, 32(4): 044008. doi: 10.1088/1674-4926/32/4/044008 |
9 |
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy Zhu Yan, Li Mifeng, He Jifang, Yu Ying, Ni Haiqiao, et al. Journal of Semiconductors, 2011, 32(8): 083001. doi: 10.1088/1674-4926/32/8/083001 |
10 |
Porous waveguide facilitated low divergence quantum cascade laser Yin Wen, Lu Quanyong, Liu Wanfeng, Zhang Jinchuan, Wang Lijun, et al. Journal of Semiconductors, 2011, 32(6): 064008. doi: 10.1088/1674-4926/32/6/064008 |
11 |
Guo Wanhong, Lu Quanyong, Liu Junqi, Zhang Wei, Jiang Yuchao, et al. Journal of Semiconductors, 2010, 31(11): 114014. doi: 10.1088/1674-4926/31/11/114014 |
12 |
A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating Chen Dingbo, Zhu Hongliang, Liang Song, Wang Baojun, Wang Lufeng, et al. Journal of Semiconductors, 2008, 29(4): 682-685. |
13 |
Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy Liu Linsheng, Wang Wenxin, Liu Su, Zhao Hongming, Liu Baoli, et al. Chinese Journal of Semiconductors , 2007, 28(9): 1411-1414. |
14 |
Waveguide Optimization for a 9.0μm GaAs-Based Quantum Cascade Laser Li Lu, Liu Fengqi, Shao Ye, Liu Junqi, Wang Zhanguo, et al. Chinese Journal of Semiconductors , 2007, 28(1): 31-35. |
15 |
Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong, et al. Chinese Journal of Semiconductors , 2006, 27(5): 916-920. |
16 |
Cao Juncheng, Lü Jingtao Chinese Journal of Semiconductors , 2006, 27(2): 304-308. |
17 |
Single Mode Operation of Short-Cavity Quantum Cascade Lasers Liu Fengqi, Guo Yu, Li Lu, Shao Ye, Liu Junqi, et al. Chinese Journal of Semiconductors , 2006, 27(4): 679-682. |
18 |
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy Niu Zhichuan, Ni Haiqiao, Fang Zhidan, Gong Zheng, Zhang Shiyong, et al. Chinese Journal of Semiconductors , 2006, 27(3): 482-488. |
19 |
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes Chinese Journal of Semiconductors , 2005, 26(9): 1860-1864. |
20 |
Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers Lu Xiuzhen, Liu Fengqi, Liu Junqi, Jin Peng, Wang Zhanguo, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2267-2270. |
Article views: 2202 Times PDF downloads: 489 Times Cited by: 0 Times
Received: 27 May 2016 Revised: Online: Published: 01 January 2007
Citation: |
Liu Junqi, Liu Fengqi, Li Lu, Shao Ye, Guo Yu, Wang Zhanguo. Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers[J]. Journal of Semiconductors, 2007, 28(S1): 44-47.
****
Liu J Q, Liu F Q, Li L, Shao Y, Guo Y, Wang Z G. Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers[J]. Chin. J. Semicond., 2007, 28(S1): 44.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2