Chin. J. Semicond. > 1991, Volume 12 > Issue 5 > 294-299
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离化团束方法在GaAs衬底上外延CdTe单晶薄膜

冯嘉猷 , 汤海鹏 , 朱洪林 , 范玉殿 and 李恒德

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(5): 294-299
      冯嘉猷, 汤海鹏, 朱洪林, 范玉殿, 李恒德. 离化团束方法在GaAs衬底上外延CdTe单晶薄膜[J]. 半导体学报(英文版), 1991, 12(5): 294-299.
      Citation:
      冯嘉猷, 汤海鹏, 朱洪林, 范玉殿, 李恒德. 离化团束方法在GaAs衬底上外延CdTe单晶薄膜[J]. 半导体学报(英文版), 1991, 12(5): 294-299.
      shu

      • Received Date: 2015-08-19

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