Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos

Xu Jian; Ding Lei; Han Zhengsheng; Zhong Chuanjie

J. Semicond. > 2008, Volume 29 > Issue 3 > 559-562

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Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos

Xu Jian, Ding Lei, Han Zhengsheng and Zhong Chuanjie

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Abstract: Based on an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI) MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed.Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly.The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI.

Key words: threshold voltage, two-dimension effects, fully depleted SOI, HALO structure

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Received: 18 August 2015 Revised: 01 November 2007 Online: Published: 01 March 2008

Based on an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI) MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed.Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly.The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI.

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