Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 419-423
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高剂量Ge离子注入直接形成nc-Ge的研究

曾颖秋 , 卢铁城 , 沈丽如 , 李恒 , 杨经国 , 邹萍 and 林理彬

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Key words: Ge纳米晶, 离子注入, 非晶态-晶态相变

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 419-423
      曾颖秋, 卢铁城, 沈丽如, 李恒, 杨经国, 邹萍, 林理彬. 高剂量Ge离子注入直接形成nc-Ge的研究[J]. 半导体学报(英文版), 2004, 25(4): 419-423.
      Citation:
      曾颖秋, 卢铁城, 沈丽如, 李恒, 杨经国, 邹萍, 林理彬. 高剂量Ge离子注入直接形成nc-Ge的研究[J]. 半导体学报(英文版), 2004, 25(4): 419-423.
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      • Received Date: 2015-08-19

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