Chin. J. Semicond. > 1992, Volume 13 > Issue 3 > 155-161
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MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究

卢励吾 , 周洁 , 庄婉如 and 梅野正義

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(3): 155-161
      卢励吾, 周洁, 庄婉如, 梅野正義. MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究[J]. 半导体学报(英文版), 1992, 13(3): 155-161.
      Citation:
      卢励吾, 周洁, 庄婉如, 梅野正義. MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究[J]. 半导体学报(英文版), 1992, 13(3): 155-161.
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      • Received Date: 2015-08-19

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