| Citation: |
Chen Haifeng, Ma Xiaohua, Hao Yue, Cao Yanrong, Huang Jianfang, Wang Wenbo, Li Kang. Characteristics of I sub,max Stress in 90nm-Technology nMOSFETs[J]. Journal of Semiconductors, 2005, 26(12): 2411-2415.
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Chen H F, Ma X H, Hao Y, Cao Y R, Huang J F, Wang W B, Li K. Characteristics of I sub,max Stress in 90nm-Technology nMOSFETs[J]. Chin. J. Semicond., 2005, 26(12): 2411.
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Characteristics of I sub,max Stress in 90nm-Technology nMOSFETs
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Abstract
The characteristics of hot carriers in 90nm-technology LDD (lightly doped drain) nMOSFETs are investigated under Isub,max stress.By analyzing the variation of the GIDL (gate-induced drain leakage) current before and after applying successive stresses to the LDD nMOSFET,it is found that when the nMOSFET’s gate thickness and channel length approach 1nm and 100nm respectively,the Isub,max stress is neither a electron-injection stress nor a both electron- and hole-injection stress,but a hole-injection stress.Furthermore,the conclusion is supported by the experiment of hole-injection stress and negative Isub,max stress.-
Keywords:
- I sub,max stress,
- off-state,
- band-band tunneling,
- trapping charge,
- GIDL
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References
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Proportional views
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