Chin. J. Semicond. > 1999, Volume 20 > Issue 12 > 1087-1092
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热载流子应力感应n-MOSFETsGIDL特性退化的机理

徐静平 and 黎沛涛

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(12): 1087-1092
      徐静平, 黎沛涛. 热载流子应力感应n-MOSFETsGIDL特性退化的机理[J]. 半导体学报(英文版), 1999, 20(12): 1087-1092.
      Citation:
      徐静平, 黎沛涛. 热载流子应力感应n-MOSFETsGIDL特性退化的机理[J]. 半导体学报(英文版), 1999, 20(12): 1087-1092.
      shu

      • Received Date: 2015-08-19

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