Chin. J. Semicond. > 1984, Volume 5 > Issue 4 > 443-448
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用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度

谭长华 and 许铭真

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(4): 443-448
      谭长华, 许铭真. 用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度[J]. 半导体学报(英文版), 1984, 5(4): 443-448.
      Citation:
      谭长华, 许铭真. 用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度[J]. 半导体学报(英文版), 1984, 5(4): 443-448.
      shu

      • Received Date: 2015-08-20

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