Abstract: Organic thin film field effect transistor of pentacene is fabricated through evaporating heated pentacene powder in high vacuum.Being a semiconductor layer,pentacene thin film is deposited on p-type silicon (100) that has a silicon dioxide layer.The thickness of pentacene thin film is 70nm.The thickness of Au electrodes including source,drain and gate is 50nm.As an insulating layer,the silicon dioxide is 300nm thick.The channel in the pentacene film field effect transistor is 15μm long,and 190μm wide.AFM is used to characterize the surface morphology of the pentacene thin film.The influence of deposition rate of the pentacene film on the electric characteristics of pentacene field effect transistor is studied.At a deposition rate of 0.24 and 1.36nm/min,the mobility of the field effect transistor is 2.7E-4 and 2.2E-6cm2／(V·s) respectively.

Key words: organic thin film field effect transistor,  pentacene,  electric characteristics