Chin. J. Semicond. > 1989, Volume 10 > Issue 8 > 615-619
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退火气氛中痕量氧在反应形成Pt硅化物中的作用

李映雪 , 武国英 , 张国炳 and 王佑祥

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(8): 615-619
      李映雪, 武国英, 张国炳, 王佑祥. 退火气氛中痕量氧在反应形成Pt硅化物中的作用[J]. 半导体学报(英文版), 1989, 10(8): 615-619.
      Citation:
      李映雪, 武国英, 张国炳, 王佑祥. 退火气氛中痕量氧在反应形成Pt硅化物中的作用[J]. 半导体学报(英文版), 1989, 10(8): 615-619.
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      • Received Date: 2015-08-19

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