Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1695-1700
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阶梯分布埋氧层固定电荷SOI高压器件新结构和耐压模型

郭宇锋 , 李肇基 , 张波 and 方健

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Key words: SOI, 埋氧层固定电荷, 击穿电压, 模型

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1695-1700
      郭宇锋, 李肇基, 张波, 方健. 阶梯分布埋氧层固定电荷SOI高压器件新结构和耐压模型[J]. 半导体学报(英文版), 2004, 25(12): 1695-1700.
      Citation:
      郭宇锋, 李肇基, 张波, 方健. 阶梯分布埋氧层固定电荷SOI高压器件新结构和耐压模型[J]. 半导体学报(英文版), 2004, 25(12): 1695-1700.
      shu

      • Received Date: 2015-08-19

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