| Citation: |
Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm[J]. Journal of Semiconductors, 2006, 27(5): 796-803.
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Li R Z, Li D L, Du H, Hai C H, Han Z S. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm[J]. Chin. J. Semicond., 2006, 27(5): 796.
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SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm
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Abstract
We improve the genetic algorithm by combining it with a simulated annealing algorithm.The improved algorithm is used to extract model parameters of SOI MOSFETs,which are fabricated with standard 1.2μm CMOS/SOI technology developed by the Institute of Microelectronics of the Chinese Academy of Sciences.The simulation results using this model are in excellent agreement with experimental results.The precision is improved noticeably compared to commercial software.This method requires neither a deeper understanding of SOI MOSFETs model nor more complex computations than conventional algorithms used by commercial software.Comprehensive verification shows that this model is applicable to a very large range of device sizes. -
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