| Citation: |
Lin Tao, Li Qingmin, Li Lianbi, Yang Ying, Chen Zhiming. A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate[J]. Journal of Semiconductors, 2008, 29(5): 936-939.
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Lin T, Li Q M, Li L B, Yang Y, Chen Z M. A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate[J]. J. Semicond., 2008, 29(5): 936.
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A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate
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Abstract
3C-SiC film was hetero-epitaxial grown on 6H-SiC substrate by the low temperature hot wall chemical vapor deposition method at 1250℃,using SiH4 and C3H8 as gas sources.Results of scanning electron microscopy and atomic force microscopy show that the sample's surface is smooth without a visible island structure.The image of the cross-section transmission electron microscopy shows that the compact and uniform SiC epi-layer has a flat interface,and its thickness is about 50nm.High-resolution transmission electron microscopy shows that the substrate and epi-layer are well-arranged 6H-SiC and 3C-SiC structures,respectively,with a smooth transition and no polytype in the junction.The selected area electron diffraction pattern also shows that the epi-layer is 3C-SiC film with a zinc blende structure,and the calculated lattice constant is 0.4362nm. -
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