Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1061-1065
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部分耗尽0.25μmSOI射频nMOSFET(英文)

李俊峰 , 杨荣 , 赵玉印 , 柴淑敏 , 刘明 , 徐秋霞 and 钱鹤

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Key words: 结构, 工艺, 仿真, 实验, 射频, SOI

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1061-1065
      李俊峰, 杨荣, 赵玉印, 柴淑敏, 刘明, 徐秋霞, 钱鹤. 部分耗尽0.25μmSOI射频nMOSFET(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1061-1065.
      Citation:
      李俊峰, 杨荣, 赵玉印, 柴淑敏, 刘明, 徐秋霞, 钱鹤. 部分耗尽0.25μmSOI射频nMOSFET(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1061-1065.
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      • Received Date: 2015-08-19

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