Chin. J. Semicond. > 2000, Volume 21 > Issue 6 > 542-547
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离子注入硅快速退火合成Y硅化物的特性(英文)

张通和 and 吴瑜光

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Key words: Y注入硅, 掠角沟道分析, MEVVA离子注入

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(6): 542-547
      张通和, 吴瑜光. 离子注入硅快速退火合成Y硅化物的特性(英文)[J]. 半导体学报(英文版), 2000, 21(6): 542-547.
      Citation:
      张通和, 吴瑜光. 离子注入硅快速退火合成Y硅化物的特性(英文)[J]. 半导体学报(英文版), 2000, 21(6): 542-547.
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      • Received Date: 2015-08-20

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