| Citation: |
Guo Hui, Zhang Yimen, Zhang Yuming. Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide[J]. Journal of Semiconductors, 2007, 28(1): 5-9.
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Guo H, Zhang Y M, Zhang Y M. Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide[J]. Chin. J. Semicond., 2007, 28(1): 5.
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Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide
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Abstract
N-wells are created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer.Ti and Ni are deposited in sequence on the surface of the active regions.Ni2Si is identified as the dominant phase by X-ray diffraction (XRD) analysis after metallization annealing.An amorphous C film at the Ni2Si/SiC interface is confirmed by an X-ray energy-dispersive spectrometer (XEDS).The Ni2Si and amorphous C film are etched away selectively,followed by deposition of new metal films without annealing.Measurement of the current-voltage characteristics shows that the contacts are still ohmic after the Ni2Si and amorphous C film are replaced by new metal films.The sheet resistance Rsh of the implanted layers decreases from 975 to 438Ω/□,because carbon vacancies (VC) appeared during annealing,which act as donors for electrons in SiC.-
Keywords:
- Ni,
- ohmic contact,
- silicon carbide,
- carbon vacancies,
- P+ ion implantation
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References
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Proportional views
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