Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 547-551
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考虑源漏隧穿的DG MOSFET弹道输运及其模拟

郑期彤 , 张大伟 , 江波 , 田立林 and 余志平

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Key words: 源漏隧穿, DG MOSFET, 弹道输运, 器件模拟

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 547-551
      郑期彤, 张大伟, 江波, 田立林, 余志平. 考虑源漏隧穿的DG MOSFET弹道输运及其模拟[J]. 半导体学报(英文版), 2004, 25(5): 547-551.
      Citation:
      郑期彤, 张大伟, 江波, 田立林, 余志平. 考虑源漏隧穿的DG MOSFET弹道输运及其模拟[J]. 半导体学报(英文版), 2004, 25(5): 547-551.
      shu

      • Received Date: 2015-08-19

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