| Citation: |
Zhao Yongmei, Sun Guosheng, Liu Xingfang, Li Jiaye, Zhao Wanshun, Wang Lei, Luo Muchang, Li Jinmin. Mechanism of Thermal Oxidation of 3C.SiC Grown on Si[J]. Journal of Semiconductors, 2007, 28(S1): 4-3.
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Zhao Y M, Sun G S, Liu X F, Li J Y, Zhao W S, Wang L, Luo M C, Li J M. Mechanism of Thermal Oxidation of 3C.SiC Grown on Si[J]. Chin. J. Semicond., 2007, 28(S1): 4.
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Mechanism of Thermal Oxidation of 3C.SiC Grown on Si
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Abstract
3C-SiC heteroepitaxial layer is grown on Si(100)substrate by low pressure chemical vapor deposition (LPCVD)· Thermal oxidation of 3C-SiC is conducted in a dry 02 at 1050℃. X-ray photoelectron spectroscopy (XPS)，combining with the Ar+sputtering technology，is used to analyze the change of the binding energy of Si2p，Cls and Ols，with the sputtering depth in the SiOz layer and SiO2/SiC interface region.Thermal oxidation model of 3C-SiC is presented and the oxidation mechanism is discussed according to the XPS depth analysis.-
Keywords:
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References
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Proportional views
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