| Citation: |
Gu Qilin, Chen Xudong, Ling Zhicong, Mei Yongfeng, Fu Jinyu, Xiao Jiju, Zhu Jianhao. Electrical Transport Properties of ZnO/p-Si Heterostructure[J]. Journal of Semiconductors, 2007, 28(S1): 149-152.
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Gu Q L, Chen X D, Ling Z C, Mei Y F, Fu J Y, Xiao J J, Zhu J H. Electrical Transport Properties of ZnO/p-Si Heterostructure[J]. Chin. J. Semicond., 2007, 28(S1): 149.
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Electrical Transport Properties of ZnO/p-Si Heterostructure
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Abstract
Rectifying undoped and nitrogen-doped ZnO/p-Si heterojunctions are fabricated by plasma immersion ion implan· tation and deposition.The undoped and nitrogen-doped ZnO films are n type(n≈10^19cm-3) and highly resistive(resistivity ～10^5 Ω·cm)，respectively.While forward biasing the undoped-ZnO/P-Si，the current follows ohmic behavior if the applied bias iS larger than～0.4V.However，for the nitrogen-doped-ZnO/P-Si sample，the current is ohmic for Vforward<1.0V and then transits to J-V2 for Vforward>2.5V.The transport properties of the undoped-ZnO/P-Si and the N-doped-ZnO/P·Si diodes are explained in terms of the Anderson model and the space charge limited current model，respectively. -
References
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