Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1730-1734
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基于双肖特基接触GaN薄膜特性参数测试新方法

罗谦 , 杨谟华 , 杜江锋 , 梅丁蕾 , 王良臣 and 白云霞

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Key words: GaN, 肖特基接触, 测量方法

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1730-1734
      罗谦, 杨谟华, 杜江锋, 梅丁蕾, 王良臣, 白云霞. 基于双肖特基接触GaN薄膜特性参数测试新方法[J]. 半导体学报(英文版), 2004, 25(12): 1730-1734.
      Citation:
      罗谦, 杨谟华, 杜江锋, 梅丁蕾, 王良臣, 白云霞. 基于双肖特基接触GaN薄膜特性参数测试新方法[J]. 半导体学报(英文版), 2004, 25(12): 1730-1734.
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      • Received Date: 2015-08-19

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