Chin. J. Semicond. > 1998, Volume 19 > Issue 10 > 793-797
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1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器

陈博 , 王圩 , 张静媛 , 汪孝杰 , 周帆 , 朱洪亮 , 边静 and 马朝华

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    Received: 18 August 2015 Revised: Online: Published: 01 October 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(10): 793-797
      陈博, 王圩, 张静媛, 汪孝杰, 周帆, 朱洪亮, 边静, 马朝华. 1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器[J]. 半导体学报(英文版), 1998, 19(10): 793-797.
      Citation:
      陈博, 王圩, 张静媛, 汪孝杰, 周帆, 朱洪亮, 边静, 马朝华. 1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器[J]. 半导体学报(英文版), 1998, 19(10): 793-797.
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      • Received Date: 2015-08-18

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