Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 268-273
|

CONTENTS

MOSFET热载流子退化/寿命模型参数提取

杨谟华 , 于奇 , 王向展 , 陈勇 , 刘玉奎 , 肖兵 , 杨沛锋 , 方朋 , 孔学东 , 谭超元 and 钟征宇

+ Author Affiliations

PDF

Key words: 模型参数, 热载流子, 退化/寿命, MOSFET

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2796 Times PDF downloads: 996 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 268-273
      杨谟华, 于奇, 王向展, 陈勇, 刘玉奎, 肖兵, 杨沛锋, 方朋, 孔学东, 谭超元, 钟征宇. MOSFET热载流子退化/寿命模型参数提取[J]. 半导体学报(英文版), 2000, 21(3): 268-273.
      Citation:
      杨谟华, 于奇, 王向展, 陈勇, 刘玉奎, 肖兵, 杨沛锋, 方朋, 孔学东, 谭超元, 钟征宇. MOSFET热载流子退化/寿命模型参数提取[J]. 半导体学报(英文版), 2000, 21(3): 268-273.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return